Cu-doped GaN grown by molecular beam epitaxy

Magnesium incorporation in GaN grown by molecular-beam epitaxy

A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecular-beam epitaxy. Incorporation was studied for both ~0001!, or Ga-polarity and (0001̄) or N-polarity orientations. Up to a factor of 30 times more Mg was incorporated in Ga-polarity layers under certain conditions, as determined by seco...

Excitonic recombination in GaN grown by molecular beam epitaxy

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24GHz have been performed on a series of MBE-grown Mg-doped (10–10 cm ) GaN homoepitaxial layers. High-resolution PL at 5K revealed intense bandedge emission with narrow linewidths (0.2–0.4meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for G...

Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy

Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN

Titanium dioxide sTiO2, with the rutile structured was grown on s0001d oriented GaN and s0001d Al0.33Ga0.67N/GaN heterostructure field effect transistor sHFETd structures by molecular beam epitaxy. X-ray diffraction showed s100dTiO2 i s0001dGaNsAlGaNd and f001gTiO2 i k112̄0lGaNsAlGaNd with three rotational variants of the TiO2. Transmission electron microscopy of 50 nm thick TiO2 films on GaN an...